Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a stro...

Influences of nitrogen,phosphorus and population density on yield and N,P and K concentrations of forage corn

Extraction of MOSFET Threshold Voltage, Series Resistance, Effective Channel Length, and Inversion Layer Mobility From Small-Signal Channel Conductance Measurement

This paper proposes and demonstrates the extraction of MOSFET threshold voltage, source-drain resistance, gate field mobility reduction factor, and transistor gain factor from the measurement of the small-signal source-drain conductance of a transistor as a function of dc gate bias with zero dc drain bias. The theory is based on the analytical model that includes the effects of source-drain res...

Inversion Layer Effective Mobility Model for Pocket Implanted Nano Scale n-MOSFET

Carriers scattering in the inversion channel of nMOSFET dominates the drain current. This paper presents an effective electron mobility model for the pocket implanted nano scale n-MOSFET. The model is developed by using two linear pocket profiles at the source and drain edges. The channel is divided into three regions at source, drain and central part of the channel region. The total number of ...

New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model

We have studied the characteristics of MOSFET degradation induced by hotcarriers. When the characteristics of drain current degradation (A/j) are applied to the stress time(t) dependence AIj oc t, the exponent n is clearly different under different bias conditions. We present a two-type interface-state model composed of deep-energy interface states and shallow-energy interface states which have...